Rao, Gowrish K and Bangera, Kasturi V and Shivakumar, G K (2011) Studies on Vacuum Deposited p-ZnTe/n-CdTe Heterojunction diodes. Solid-State Electronics, 56 (1). pp. 100-103. ISSN 0038-1101
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Abstract
The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I–V characteristics. The C–V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson’s model.
Item Type: | Article |
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Additional Information: | © 2010 Elsevier |
Uncontrolled Keywords: | p-ZnTe/n-CdTe heterojunction Vacuum deposition I–V characterization C–V characterization Band diagram |
Subjects: | Engineering > MIT Manipal > Physics |
Depositing User: | MIT Library |
Date Deposited: | 30 Aug 2011 09:18 |
Last Modified: | 30 Aug 2011 09:18 |
URI: | http://eprints.manipal.edu/id/eprint/1179 |
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