Studies on Vacuum Deposited p-ZnTe/n-CdTe Heterojunction diodes

Rao, Gowrish K and Bangera, Kasturi V and Shivakumar, G K (2011) Studies on Vacuum Deposited p-ZnTe/n-CdTe Heterojunction diodes. Solid-State Electronics, 56 (1). pp. 100-103. ISSN 0038-1101

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Abstract

The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I–V characteristics. The C–V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson’s model.

Item Type: Article
Additional Information: © 2010 Elsevier
Uncontrolled Keywords: p-ZnTe/n-CdTe heterojunction Vacuum deposition I–V characterization C–V characterization Band diagram
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 30 Aug 2011 09:18
Last Modified: 30 Aug 2011 09:18
URI: http://eprints.manipal.edu/id/eprint/1179

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