Growth and study of CuIn1-xAlxSe2 thin films for photovoltaic applications

Kekuda, Dhananjaya and Nagaraju, J and Krupanidhi, S B (2012) Growth and study of CuIn1-xAlxSe2 thin films for photovoltaic applications. In: Proceedings of the 56th DAE Solid state Physics Symposium.

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Official URL: http://dx.doi.org/10.1063/1.4710375

Abstract

Chalcopyrite semiconductors such as CuIn1-xAlxSe2 have been currently investigated as a promising material for photovoltaic applications since their band gap energy matches with the solar spectrum. The absorber layers as thin as 2�m are sufficient for the absorption of the visible part of sun light, because they are characterized by a high absorption coefficient. The absorber layers are grown by the multi-source evaporation technique. From the X-ray analysis it is found that the films had a preferred oriented along the (112) direction, which confirmed the chalcopyrite phase. The optical studies revealed that replacing 50% of In by Al, will bring the band gap energy to 1.5eV, which will match the solar spectrum. Photo-response of the heterostructure is presented.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Chalcopyrite thin films, X-ray Diffraction, Band gap energy
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 24 Aug 2013 06:40
Last Modified: 24 Aug 2013 06:40
URI: http://eprints.manipal.edu/id/eprint/136892

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