Dielectric anomaly in Li-doped zinc oxide thin films grown by sol–gel route

Kekuda, Dhananjaya and Krupanidhi, S B (2007) Dielectric anomaly in Li-doped zinc oxide thin films grown by sol–gel route. Applied Physics A, 88. pp. 421-424.

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Sol–gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1−xLixO, x = 0.15). Polycrystalline films were obtained at a growth temperature of 400–500 ◦C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C–V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15 μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

Item Type: Article
Uncontrolled Keywords: Li doped ZnO, Ferroelectricity, sputering
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 27 Aug 2013 09:49
Last Modified: 27 Aug 2013 09:49
URI: http://eprints.manipal.edu/id/eprint/136938

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