Kekuda, Dhananjaya and Nagaraju, J and Choudhury, Palash Roy and Krupanidhi, S B (2006) Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET. Journal of Physics D: Applied Physics, 39. pp. 2664-2669.
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Growth of ferroelectric Li doped ZnO thin films for Metal-Ferroelectric-Semiconductor FET.pdf - Published Version Restricted to Registered users only Download (632kB) | Request a copy |
Abstract
A metal-ferroelectric-semiconductor structure has been developed by depositing Li-doped ZnO thin films (Zn1−xLixO, x = 0.25) on p-type Si substrates by the pulsed laser ablation technique. (002) preferential oriented films were deposited at a low growth temperature of 500 ◦C and 100mTorr oxygen partial pressure. The dielectric response of the films has been studied over a temperature range 250–373 K. A dielectric anomaly was observed at 360 K. The capacitance–voltage characteristics of Ag/Zn0.75Li0.25O/Si exhibited clockwise hysteresis loops with a memory window of 2V. The films deposited at 100mTorr pressure show a stable current density and a saturated polarization hysteresis loop with a remanent polarization of 0.09μCcm−2 and coercive field of 25 kV cm−1. Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. Ohmic behaviour was observed at low voltage, while higher voltages induced a bulk space charge. The optical properties of Zn0.75Li0.25O thin films were studied in the wavelength range 300–900 nm. The appearance of ferroelectric nature in Li-doped ZnO films adds an additional dimension to its applications.
Item Type: | Article |
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Uncontrolled Keywords: | Li doped ZnO, Ferroelectricity, Pulsed laser ablation |
Subjects: | Engineering > MIT Manipal > Physics |
Depositing User: | MIT Library |
Date Deposited: | 27 Aug 2013 09:41 |
Last Modified: | 27 Aug 2013 09:41 |
URI: | http://eprints.manipal.edu/id/eprint/136941 |
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