Investigations on magnetron sputtered ZnO thin films and Au/ZnOSchottky diodes

Kekuda, Dhananjaya and Nagaraju, J and Krupanidhi, S B (2008) Investigations on magnetron sputtered ZnO thin films and Au/ZnOSchottky diodes. Journal of Applied Physics, 104 (4). pp. 344-349.

PDF Investigations on multimagnetron sputtered Zn1−xMgxO thin films through.pdf - Published Version Restricted to Registered users only Download (443kB) | Request a copy

Abstract

Magnetron sputtering is a promising technique for the growth of oxide materials including ZnO, which allows deposition of films at low temperatures with good electrical properties. The current–voltage (I–V) characteristics of Au Schottky contacts on magnetron sputtered ZnOfilms have been measured over a temperature range of 278–358K. Both effective barrier height (fB,eff) and ideality factor (n) are found to be a function of temperature, and this behavior has been interpreted on the basis of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the interface. Density of states (DOS) near the Fermi level is determined using a model based on the space charge limited current (SCLC). The dispersion in both real and imaginary parts of the dielectric constant at low frequencies, with increase in temperature is attributed to the space charge effect. Complex impedance plots exhibited two semicircles, which corresponds to bulk grains and the grain boundaries..

Actions (login required)

View Item