Investigations on multimagnetron sputtered Zn1−xMgxO thin films through metal-ferroelectric-semiconductor configuration

Kekuda, Dhananjaya and Nagaraju, J and Krupanidhi, S B (2012) Investigations on multimagnetron sputtered Zn1−xMgxO thin films through metal-ferroelectric-semiconductor configuration. Journal of Applied Physics, 104. pp. 1-5.

[img] PDF
Investigations on multimagnetron sputtered Zn1−xMgxO thin films through.pdf - Published Version
Restricted to Registered users only

Download (443kB) | Request a copy

Abstract

The effect of Mg doping in ZnO is investigated through structural, electrical, and optical properties.Zn1−xMgxO _0___0.3_ thin films were deposited on Si _100_ and corning glass substrates using multimagnetron sputtering. Investigations on the structural properties of the films revealed that the increase in Mg concentration resulted in phase evolution from hexagonal to cubic phase. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The Zn0.7Mg0.3O thin films exhibited a well-defined polarization hysteresis loop with a remnant polarization of 0.2 _Ccm2 and coercive field of 8 kV/cm at room temperature. An increase in the band gap with an increase in Mg content was observed in the range of 3.3–3.8 eV for x=0–0.3. The average transmittance of the films was higher than 90% in the wavelength region _=400–900 nm

Item Type: Article
Uncontrolled Keywords: Mg doped ZnO, metal ferroelectric-semiconductor junction
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 28 Aug 2013 11:36
Last Modified: 28 Aug 2013 11:36
URI: http://eprints.manipal.edu/id/eprint/136946

Actions (login required)

View Item View Item