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Investigations on zinc oxide thin films grown on Si (1 0 0) by thermal oxidation

Kekuda, Dhananjaya and Nagaraju, J and Krupanidhi, S B (2007) Investigations on zinc oxide thin films grown on Si (1 0 0) by thermal oxidation. Materials Science and Engineering B, 137. pp. 126-130. ISSN 0921-5107

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Abstract

Thin films of ZnO were grown on p-type Si (1 0 0) substrates by thermal oxidation. The in situ growth of the metallic Zn films were thermally oxidized at different temperatures ranging from 300 to 500 ◦C to yield ZnO thin films. The structural characterization of the thin filmswas carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The X-ray diffraction measurements show that the films deposited at 500 ◦C had better crystalline quality than the rest. The electrical transport properties of the ZnO/Si heterojunction were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The heterojunction exhibited a barrier height, which is consistent with the energy difference between the work functions of Si and ZnO. Complex impedance spectroscopy measurements at temperatures ranging from 50 to 125 ◦C were performed on these heterojunctions.

Item Type: Article
Uncontrolled Keywords: Thermal oxidation; Heterojunction; Complex impedance spectroscopy
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 28 Aug 2013 09:06
Last Modified: 28 Aug 2013 09:06
URI: http://eprints.manipal.edu/id/eprint/136947

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