Kekuda, Dhananjaya and Chun, Wei Ou and Chuan, Yi Yang and Meng, Chyi Wu and Chih, Wei Chu (2008) Ambipolar transport behavior in In2O3/pentacene hybrid heterostructure and their complementary circuits. Applied Physics Letters, 93.
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Ambipolar transport behavior in In2O3pentacene hybrid heterostructure.pdf - Published Version Restricted to Registered users only Download (428kB) | Request a copy |
Abstract
In this Letter, ambipolar transport properties of a bilayer of In2O3 and a pentacene heterostructure have been realized. While In2O3 thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO2 / p-Si substrates. However, when a bilayer of In2O3/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits
Item Type: | Article |
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Subjects: | Engineering > MIT Manipal > Physics |
Depositing User: | MIT Library |
Date Deposited: | 03 Sep 2013 10:43 |
Last Modified: | 03 Sep 2013 10:43 |
URI: | http://eprints.manipal.edu/id/eprint/137024 |
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