MU Digital Repository
Logo

Ambipolar transport behavior in In2O3/pentacene hybrid heterostructure and their complementary circuits

Kekuda, Dhananjaya and Chun, Wei Ou and Chuan, Yi Yang and Meng, Chyi Wu and Chih, Wei Chu (2008) Ambipolar transport behavior in In2O3/pentacene hybrid heterostructure and their complementary circuits. Applied Physics Letters, 93.

[img] PDF
Ambipolar transport behavior in In2O3pentacene hybrid heterostructure.pdf - Published Version
Restricted to Registered users only

Download (428kB) | Request a copy

Abstract

In this Letter, ambipolar transport properties of a bilayer of In2O3 and a pentacene heterostructure have been realized. While In2O3 thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO2 / p-Si substrates. However, when a bilayer of In2O3/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits

Item Type: Article
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 03 Sep 2013 10:43
Last Modified: 03 Sep 2013 10:43
URI: http://eprints.manipal.edu/id/eprint/137024

Actions (login required)

View Item View Item