Kekuda, Dhananjaya and Chih, Wei Chu (2007) Realization of In2O3 thin film transistors through reactive evaporation process. Applied Physics Letters, 91.

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Abstract

In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction �XRD� and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred �222� orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors �TFTs�. TFTs fabricated on SiO2 gate dielectric exhibited an on/off ratio of 104 and a field-effect mobility of 27 cm2 /V s. High on-state current makes them potential candidates for flat-panel display devices. © 2007 American Institute of Physics.

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