Mott conductivity in nanocluster carbon thin films

Shounak, De and Niranjana, S and Satyanarayana, B S and Rao, Mohan K (2009) Mott conductivity in nanocluster carbon thin films. Optoelectronics and advanced materials – Rapid communications, 3 (12). pp. 1365-1367.

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Abstract

Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott’s variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527x1017 cm-3 eV-1

Item Type: Article
Uncontrolled Keywords: Nanocluster carbon thin film , Cathodic Arc process , Sp2 and sp3 bonding , Variable range hopping
Subjects: Engineering > MIT Manipal > Biomedical
Engineering > MIT Manipal > Electronics and Communication
Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 04 Sep 2013 09:21
Last Modified: 29 Mar 2016 15:44
URI: http://eprints.manipal.edu/id/eprint/137060

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