Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits

Chun, Wei Ou and Kekuda, Dhananjaya and Zhong , Yo Ho and You-Che, Chuang and Shiau-Shin, Cheng (2008) Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits. Applied Physic Letters, 92.

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Abstract

In this article, we report the fabrication of SnO2 thin film transistors �TFTs� fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p-type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p-channel SnO2 TFTs. The on/off ratio and the field-effect mobility were �103 and 0.011 cm2 /V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p-channel oxide TFTs would open up new challenges in the area of transparent electronics.

Item Type: Article
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 04 Sep 2013 09:13
Last Modified: 04 Sep 2013 09:13
URI: http://eprints.manipal.edu/id/eprint/137063

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