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Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors

Kekuda, Dhananjaya and Chih, Wei Chu and Chun, Wei Ou and Meng, Chyi Wu and Zhong , Yo Ho and Kuo, Chuan Ho and Shih, Wei Lee (2008) Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors. Applied Physics Letters, 92.

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Abstract

Thin film transistors �TFTs� of indium oxide �In2O3� and tin oxide �SnO2� were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred �222� orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.

Item Type: Article
Additional Information: © 2008 American Institute of Physics
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 05 Sep 2013 05:45
Last Modified: 05 Sep 2013 05:45
URI: http://eprints.manipal.edu/id/eprint/137066

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