Dependence of the electron emission behaviour on oxide layer thickness in the case of alligned carbon nanotubes grown on patterned oxide layers

Satyanarayana, B S and Niranjana , S (2006) Dependence of the electron emission behaviour on oxide layer thickness in the case of alligned carbon nanotubes grown on patterned oxide layers. In: Proceedings of ASID 2006 (9th Asian Symposium on Information Display), October 8-12, New Delhi.

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Abstract

The excellent field emission characteristics displayed by carbon nanotubes / nanofibers has led to the continued interest in field emission based displays, besides it’s attractiveness for other vacuum microelectronics applications. The usefulness of carbon nanotube based emitters has been enhanced, by the feasibility of selective growth of aligned carbon nanotubes, over patterned metal catalysts. Reported in this paper is the field emission behaviour from carbon nanotubes grown on patter ned oxide with out pre deposited patterned catalyst layers. The emission seems to be dependent on the oxide layer thickness. These samples exhibit very field electron emission at fields as low as 2 - 6 V/μm. Another interesting observation is the possibility of negative differential resistance type behaviour of this field assisted electron emitters under optimum oxide thickness.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Carbon nanotube; patterened silicon dioxide layer; self aligned growth; field assisted electron emission.
Subjects: Engineering > MIT Manipal > Biomedical
Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 25 Sep 2013 06:48
Last Modified: 25 Sep 2013 06:48
URI: http://eprints.manipal.edu/id/eprint/137272

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