Thickness and Oxygen Partial Pressure Dependence on the Optical Band Gap of Indium Oxide by Reactive Evaporation

Muhammed Ali , A V and Kekuda, Dhananjaya (2012) Thickness and Oxygen Partial Pressure Dependence on the Optical Band Gap of Indium Oxide by Reactive Evaporation. Journal of Applied Sciences, 12 (16). pp. 1718-1721. ISSN 1812-5654

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Abstract

Indium oxide thin film is prepared by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical properties of the indium oxide thin films. We studied the optical band gap for different thickness and partial pressure keeping a constant annealing temperature. It was found that the band gap varies from 3.5-3.8 eV, as thickness of the film increased. The band gap energy had also shown the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at different annealing temperature was carried out.

Item Type: Article
Uncontrolled Keywords: Reactive evaporation, transparent oxide, optical properties. thin films
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 19 Oct 2013 11:13
Last Modified: 19 Oct 2013 11:13
URI: http://eprints.manipal.edu/id/eprint/137398

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