Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters

Chao-Feng, Sung and Kekuda, Dhananjaya and Li Fen, Chu and Fang-Chung, Chen and Shiau-Shin, Cheng and Yuh-Zheng, Lee and Chyi Wu, Meng and Chih-Wei, Chu (2010) Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters. Organic Electronics, 11. pp. 154-158. ISSN 1566-1199/$

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In this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (�30 nm) fluoropolymer Cytop� layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k � 20). The combined ptype and n-type field-effect transistors show similar saturation mobility �0.3 cm2/Vs to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated.

Item Type: Article
Uncontrolled Keywords: Organic Titanium oxide Dielectrics Thin-film transistors
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 04 Oct 2013 07:40
Last Modified: 04 Oct 2013 09:51
URI: http://eprints.manipal.edu/id/eprint/137405

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