Defect Density Estimation in Nanocluster Carbon Thin Films

Shounak, De and Satyanarayana, B S and Rao, Mohan K and Moorthy, V H S (2012) Defect Density Estimation in Nanocluster Carbon Thin Films. Romanian journal of Physics, 57 (3-4). pp. 657-663.

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Nanocluster carbon thin films were grown using the room temprature based cathodic arc process. These films are mixed phase material containing both sp2 and sp3 bondings. Space-charge-limited-current conduction (SCLC) mechanism was investigated in the case of Nanocluster carbon thin films. The results were analyzed by assuming uniform density of traps near the Fermi level. The values of density of states at the obtained from the SCLC measurements ranges between 6x1017 cm-3 eV-1 to 8x1017 cm-3 eV-1.

Item Type: Article
Uncontrolled Keywords: Cathodic arc process; space-charge-limited-current (SCLC); Density of states (DOS).
Subjects: Engineering > MIT Manipal > Electronics and Communication
Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 07 Oct 2013 10:06
Last Modified: 29 Mar 2016 15:42

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