Kekuda, Dhananjaya and Krupanidhi, S B (2006) Dielectric properties of c-axis oriented Zn1−xMgxO thin films grown by multimagnetron sputtering. Applied Physics Letters , 89. ISSN 1077-3118

PDF Dielectric properties of c-axis oriented Zn1−xMgxO thin films grown.pdf - Published Version Restricted to Registered users only Download (186kB) | Request a copy

Abstract

Zn1−xMgxO �x=0.3� thin films have been fabricated on Pt/TiO2 /SiO2 /Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a �002� preferred orientation. Ferroelectricity in Zn1−xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn1−xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 �C/cm2 and coercive field of 8 kV/cm at room temperature.

Actions (login required)

View Item