Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

Gaurav, Nilabh and Bhatnagar, Saransh and Ravi, Raj and Shounak, De and Niranjana , S and Satyanarayana, B S (2008) Nanocluster carbon thin film as a semiconducting layer and feasibility for device application. In: International Conference on Computing, Communication and N'etworking (ICCCN 2008).

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Abstract

Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si:H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high tempera tures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.

Item Type: Conference or Workshop Item (Paper)
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 21 Oct 2013 10:56
Last Modified: 21 Oct 2013 10:56
URI: http://eprints.manipal.edu/id/eprint/137542

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