Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing

Chao-Feng, Sung and Kekuda, Dhananjaya and Li Fen, Chu and Yuh-Zheng, Lee and Fang-Chung, Chen and Meng, Chyi Wu and Chih, Wei Chu (2009) Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing. Advanced Materials, 21. pp. 4845-4849.

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Recent research into organic semiconductors for organic thin-film transistors (OTFTs) – as alternatives to amorphous silicon-based systems – has yielded improved synthetic and fabrication techniques for devices with great potential for the use in consumable electronic applications.[1–3] To realize the advantages of organic semiconductors in practical applications, OTFTs fabricated through solution processing (spin-coating, casting, or printing) on flexible substrates are strongly desired. Although many groups have developed OTFTs incorporating soluble small-molecule or polymer semiconductors, the number of available hole-transporting materials overwhelms the number of electron-transporting materials.[4–6] Preparing efficient organic integrated circuits at low cost requires soluble hole- and electron-transporting materials that ideally exhibit comparable electrical performance. At present, the development of highperformance n-channel OTFTs remains a challenge, especially when using attractive fabrication processes (e.g., solution processing).

Item Type: Article
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 24 Oct 2013 05:24
Last Modified: 24 Oct 2013 05:24
URI: http://eprints.manipal.edu/id/eprint/137565

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