Characterizationofp-CdTe/n-CdShetero-junctions

Mahesha, M G and Bangera, Kasturi V and Shivakumar, G K (2009) Characterizationofp-CdTe/n-CdShetero-junctions. Materials Science in Semiconductor Processing, 12. pp. 89-93. ISSN 1369-8001

[img] PDF
MatScinS.pdf - Published Version
Restricted to Registered users only

Download (319kB) | Request a copy
Official URL: http://www.journals.elsevier.com/materials-science...

Abstract

Nano-crystalline CdTe/CdSthinfilmhetero-junctions have been grown on glass substrate by thermal evaporation technique.The growth conditions to get stoichio-metric compound films have been optimized. The grown hetero-junctions have been characterized for their I–V characteristics. Analysis of I–V characteristic shas been made to investigate the current conduction mechanism inp-CdTe/n-CdShetero-junction.The band gapener gyofcad miumtellurideandcadmiumsulfide films have been computed from the study of variation of resistance with temperature.Based on the study,band diagram forp-CdTe/n-CdShetero-junction has been proposed.

Item Type: Article
Uncontrolled Keywords: CdTe CdS Hetero-junction I–V characteristic
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 02 Jan 2014 07:18
Last Modified: 02 Jan 2014 07:18
URI: http://eprints.manipal.edu/id/eprint/138079

Actions (login required)

View Item View Item