Electrical Switching Studies on Amorphous Ge-Te-Sn Thin Films

Das, Chandrasree and Mahesha, M G and Rao, Mohan K and Asokan, S (2011) Electrical Switching Studies on Amorphous Ge-Te-Sn Thin Films. Solid State Physics. pp. 633-634.

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Electrical switching studies on amorphous Ge17Te83-x Snx thin films (1≤ x ≤ 4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge17Te83-x Snx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83-xSnx samples, make them suitable candidates for phase change memory applications

Item Type: Article
Uncontrolled Keywords: Chalcogenide Glasses, Electrical Switching,
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 02 Jan 2014 07:04
Last Modified: 02 Jan 2014 07:04
URI: http://eprints.manipal.edu/id/eprint/138161

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