Mahesha, M G and Bangera, Kasturi V and Shivakumar, G K (2008) Characterization of Thin Film Al/p-CdTe Schottky Diode. Turkish Journal of Physics, 32. pp. 1-6. ISSN 1303-6122

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Abstract

A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature.Using all these data, band diagram of Al/p-CdTe has been proposed.

Item Type:	Article
Uncontrolled Keywords:	Al, p-CdTe, Schottky, C-V, band diagram.
Subjects:	Engineering > MIT Manipal > Physics
Depositing User:	MIT Library
Date Deposited:	02 Jan 2014 06:59
Last Modified:	02 Jan 2014 06:59
URI:	http://eprints.manipal.edu/id/eprint/138177

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