Band-gap measurement of room temperature grown clustered Carbon films for large area microelectronics

Shounak, De and Satyanarayana, B S and Srinivasulu, M (2014) Band-gap measurement of room temperature grown clustered Carbon films for large area microelectronics. Journal of Electron Devices, 19. pp. 1601-1607. ISSN 1682 -3427.

[img] PDF
19_DE.pdf - Published Version
Restricted to Registered users only

Download (262kB) | Request a copy

Abstract

The optical characteristic of the room temperature grown clustered carbon films using cathodic arc process has been investigated by spectroscopy technique. The optical band gap and localized state E0 of the films have been determined using transmittance and absorbance at normal incidence in the spectral range of 200 nm-800 nm. The absorption edge of the films show exponential characteristic which is attributed to the electronic transition in tail states and due to disorder in the structure of the clustered carbon films. Values of the band gap were found to be 3.62 eV and 3.77 eV with breadths of 269.12 meV and 309 meV.

Item Type: Article
Uncontrolled Keywords: clustered carbon films, optical band gap, Tauc gap.
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 15 Jan 2014 11:36
Last Modified: 15 Jan 2014 11:36
URI: http://eprints.manipal.edu/id/eprint/138363

Actions (login required)

View Item View Item