Doping ZnS and ZnSe thin films with bismuth:A comparison between sandwiching techniqueand nano-particle incorporation

Rao, Gowrish K (2014) Doping ZnS and ZnSe thin films with bismuth:A comparison between sandwiching techniqueand nano-particle incorporation. Materials Science in Semiconductor Processing, 26. pp. 137-143. ISSN 1369-8001

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Abstract

The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nanoparticles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated

Item Type: Article
Uncontrolled Keywords: Bismuthp-type doping ZnS ZnSe Nano particle
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 30 Jun 2014 05:08
Last Modified: 30 Jun 2014 05:08
URI: http://eprints.manipal.edu/id/eprint/139982

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