Mahesha, M G (2014) Fabrication and Characterization of Cadmium Telluride based thin Film Transistors. SOP Transactions on Applied Physics, 1 (1). pp. 74-80. ISSN 2372-6237
![[img]](http://eprints.manipal.edu/style/images/fileicons/application_pdf.png) |
PDF
SOP_TFT.pdf - Published Version Restricted to Registered users only Download (495kB) | Request a copy |
Abstract
Cadmium telluride (CdTe) based thin film transistors (TFTs) have been fabricated by vacuum deposition technique and the fabricated TFTs are evaluated for their performance. From the study, it has been concluded that cadmium telluride can be used as active layer in thin film transistors. Also silicon monoxide (SiO) has been successfully used as insulating layer which shows good adhesion with cadmium telluride and also with metal-electrode. It has been observed that the TFT fabricated can be used both in enhancement and depletion mode. Amplification factor of about 10 has been achieved in the present study.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CdTe; II-VI Compound; SiO; TFT; Vacuum Deposition |
| Subjects: | Engineering > MIT Manipal > Physics |
| Depositing User: | MIT Library |
| Date Deposited: | 19 Jan 2015 09:47 |
| Last Modified: | 19 Jan 2015 09:47 |
| URI: | http://eprints.manipal.edu/id/eprint/141653 |
Actions (login required)
 |
View Item |