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Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method

Ali, Muhammed A V and Kekuda, Dhananjaya (2015) Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method. In: International Conference on Materials Science and Technology (ICMST 2012).

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Abstract

Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical properties of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a constant annealing temperature. It was found that the band gap varies from 3.5 to 3.8eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at different annealing temperature was carried out.

Item Type: Conference or Workshop Item (Paper)
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 09 Apr 2015 09:30
Last Modified: 09 Apr 2015 09:30
URI: http://eprints.manipal.edu/id/eprint/142355

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