170 MHz GBW, Two Stage CMOS Operational Amplifier with High Slew Rate using 180 nm Technology

Guru, Prasad and Shama, Kumara (2015) 170 MHz GBW, Two Stage CMOS Operational Amplifier with High Slew Rate using 180 nm Technology. In: INDICON 2015, 17/12/2015, Jamia Millia Islamia, University,Delhi.

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Abstract

Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at �1:8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V=�s during rising edge and 227V=�s during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications

Item Type: Conference or Workshop Item (Paper)
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 14 Jan 2016 10:17
Last Modified: 04 Jan 2017 14:35
URI: http://eprints.manipal.edu/id/eprint/145077

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