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Electronic properties of low temperature process grown Nanocluster carbon films

Shounak, De (2013) Electronic properties of low temperature process grown Nanocluster carbon films. Phd. Thesis thesis, Manipal Institute of Technology, Manipal.

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Abstract

Nano carbons are emerging as a key material for application in wide range of domains. The uniqueness of the material is its ability to bond in different ways including sp3, sp2 and sp1 and also exist in mixed phase mode, thus leading to many interesting materials. Further, International Technology Roadmap for Semiconductors (ITRS) envisages that nanocarbon in its various forms could be one of the key emerging materials, for the future. Even more important is the fact that the electronic transport mechanism in these wide range of nanostructured carbon thin films including nanotube, graphene, nanodiamonds, fullerenes, nanocluster carbon, tetrahedral amorphous carbon (ta–C) and diamond–like carbon (DLC), are yet to be fully established. Better understanding of the nature of transport in these films is crucial for any possible development of nano, micro, large area (macro) and flexible electronics devices and systems. An interesting material in this family is the room temperature deposited nanocluster carbon (NC) thin films, grown using the cathodic arc process. These nanocluster carbon thin films have been shown to be useful for possible application in the area of vacuum nanoelectronics or field assisted electron emission. However, many fundamental properties of nanocluster carbon (NC) thin films are yet to be fully studied and understood. Hence, there is a need to study the semiconducting behavior and the transport phenomenon in this material before it can be considered for electronic applications. This thesis is an effort to understand the semiconducting nature and the electronic transport behavior of these room temperature deposited nanocluster carbon thin films, grown under varying process conditions using a cathodic arc system. Initially, morphological and compositional properties have been studied. Next, basic study of electrical and electronic properties of the nanocluster carbon thin films has been carried out. Then the influence of high energy irradiation on the materials has been studied. Finally a Thin Film Transistor (TFT) using the nanocluster carbon thin films as channel material have been simulated to look at the feasibility of devices. Nanocluster carbon films grown under a broad set of process conditions using the cathodic arc process have been studied. These include varying deposition arc current, throw distance (distance between target and substrate), deposition ion energies, and the influence of deposition ambience or environment namely the partial pressures of helium, nitrogen and hydrogen gas during deposition. The techniques used to characterize and analyze the material include SEM, AFM, Raman spectroscopy, XPS, UV–Vis spectrometry, FTIR, ellipsometry, dark conductivity, SCLC, C–V and photoconductivity

Item Type: Thesis (Phd. Thesis)
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 21 Apr 2016 08:51
Last Modified: 21 Apr 2016 08:51
URI: http://eprints.manipal.edu/id/eprint/145898

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