Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode

Vali, Indudhar Panduranga and Shetty, Pramod K and Mahesha, M G and Petwal, V C (2016) Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode. In: DAE-BRNS Symp. on Nucl. Physics, 05/12/2016, SINP Kolkata.

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Abstract

In the high energy physics experiments, silicon based diodes are used to fabricate radiation detector to detect the charged particles.[1] The Schottky barrier diodes have been studied extensively to understand the behavior of metalsemiconductor interface, since such interfaces have been utilized as typical contacts in silicon devices.[2] Because of surface states, interfacial layer, microscopic clusters of metalsemiconductor phases and other effects, it is difficult to fabricate junctions with barriers near the ideal values predicted from the work functions of the two isolated materials , therefore measured barrier heights are used in the device design.[2] In this work, the Al/n-Si Schottky contacts are employed to study the diode parameters (Schottky barrier height and ideality factor), where the Schottky contacts were fabricated on electron beam irradiated silicon wafers.. The interface behavior between electron irradiated Si wafer and post metal deposition is so far not reported. This method could be an alternative way to tailor the Schottky barrier height (SBH) without subjecting semiconductor sample to pre chemical and/or post heat treatments during fabrication.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Schottky, SiC, Irradiation
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 12 Jan 2017 14:42
Last Modified: 12 Jan 2017 14:42
URI: http://eprints.manipal.edu/id/eprint/148056

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