Shetty, Pramod K and Vali, Indudhar Panduranga and Mahesha, M G (2016) Modification of Schottky contact parameters by metal deposition on electron irradiated 4H-SiC. In: National Conference on Study of Matter Using Intense Radiation Sources and Under Extreme Conditions, 03/11/2016, UGC DAE Indore.

PDF 589.pdf - Published Version Restricted to Registered users only Download (581kB) | Request a copy

Abstract

To incorporate SiC in the semiconductor devices that are operated in radiation environments, high quality of Schottky contact properties are required [1, 2]. In this view, it is important to study effect of radiation induced modifications in the device behaviour. Studying of electron beam induced changes in the Schottky contact parameters is often an important aspect to investigate. In this regard, Schottky contacts have been established on the previously electron beam irradiated surface of 4H-SiC wafer and diode parameters have been calculated using thermionic emission model

Actions (login required)

View Item