Modification of Schottky contact parameters by metal deposition on electron irradiated 4H-SiC

Shetty, Pramod K and Vali, Indudhar Panduranga and Mahesha, M G (2016) Modification of Schottky contact parameters by metal deposition on electron irradiated 4H-SiC. In: National Conference on Study of Matter Using Intense Radiation Sources and Under Extreme Conditions, 03/11/2016, UGC DAE Indore.

[img] PDF
589.pdf - Published Version
Restricted to Registered users only

Download (581kB) | Request a copy
Official URL: http://www.csr.res.in/conf.html

Abstract

To incorporate SiC in the semiconductor devices that are operated in radiation environments, high quality of Schottky contact properties are required [1, 2]. In this view, it is important to study effect of radiation induced modifications in the device behaviour. Studying of electron beam induced changes in the Schottky contact parameters is often an important aspect to investigate. In this regard, Schottky contacts have been established on the previously electron beam irradiated surface of 4H-SiC wafer and diode parameters have been calculated using thermionic emission model

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Electron Irradiation, Schottky, radiation defect
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 12 Jan 2017 14:47
Last Modified: 12 Jan 2017 14:47
URI: http://eprints.manipal.edu/id/eprint/148057

Actions (login required)

View Item View Item