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Effect of oxygen flow rate on dielectric and structural properties of DC reactive magnetron sputtered ZrO2 grown thin films at

Antony, Albin and Muhammed Ali, A V and Gibbiner, Chaya Ravi (2016) Effect of oxygen flow rate on dielectric and structural properties of DC reactive magnetron sputtered ZrO2 grown thin films at. In: CMPA, 23/05/2016, AC seminar Hall, MIT, Manipal.

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Abstract

Zirconium oxide thin films were deposited on the p-type Si substrates by DC reactive magnetron sputtering at room temperature. We investigated the structural, morphological, optical and electrical properties of ZrO2 thin films for gate dielectric a

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: DC reactive sputtering, Zirconium oxide
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 13 Jan 2017 09:01
Last Modified: 13 Jan 2017 09:01
URI: http://eprints.manipal.edu/id/eprint/148075

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