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Bandgap tailoring in CdxZn1 − xS alloy films deposited by successive ionic layer adsorption and reaction

Ashwith, VK and Rao, Gowrish K (2017) Bandgap tailoring in CdxZn1 − xS alloy films deposited by successive ionic layer adsorption and reaction. Thin Solid Films, 626 (1). pp. 1-8. ISSN 0040-6090

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Abstract

The paper reports tailoring of the optical bandgap in SILAR deposited CdxZn1-xS alloy films. Acetates and chlorides of zinc and cadmiumwere used to obtain the films. Two separate routes were employed to achieve desired alloy composition in the films. In the first route, the molar concentration of the precursors was varied. In the second route; various volumes of precursors (with fixed concentration) were used. The films were polycrystalline with predominant hexagonal phase. The bandgap of the films varied from 2.4 eV to 3.5 eV. This bandgap range is highly optimum for the window layer in solar cells and other optoelectronic applications. Variation in the bandgap was studied as a function of alloy composition. The bowing parameter of the bandgap variation was found to be different for two routes chosen to deposit the films.

Item Type: Article
Uncontrolled Keywords: Alloy film; Cadmium zinc sulfide; Bandgap tailoring; Successive ionic layer adsorption and reaction
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 13 Mar 2017 05:35
Last Modified: 13 Mar 2017 05:35
URI: http://eprints.manipal.edu/id/eprint/148385

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