Electrical and photoresponse properties of vacuum deposited Si/ Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

Rao, Gowrish K (2017) Electrical and photoresponse properties of vacuum deposited Si/ Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes. Applied Physics A: Materials Science and Processing, 123 (4). ISSN 09478396

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Official URL: http://link.springer.com/article/10.1007/s00339-01...

Abstract

The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models

Item Type: Article
Uncontrolled Keywords: Thin film; Photodiodes; ZnSe
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 13 Mar 2017 05:28
Last Modified: 13 Mar 2017 05:28
URI: http://eprints.manipal.edu/id/eprint/148407

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