Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

Vali, Indudhar Panduranga and Shetty, Pramod K and Mahesha, M G and Petwal, V C and Dwivedi, Jishnu and Choudhary, R J (2017) Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation. Applied Surface Science, 407. pp. 171-176. ISSN 0169-4332

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The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (�B), ideality factor (n)and series resistance (Rs). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of �B was observed as a function of EBI dose. The improved n with increased �B is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune Schottky contact parameters by metal deposition on the electron beam irradiated n-Si wafers.

Item Type: Article
Uncontrolled Keywords: Electron beam irradiation XPS Schottky barrier height Ideality factor Series resistance Space charge limited emission
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 03 Jun 2017 10:46
Last Modified: 03 Jun 2017 10:46
URI: http://eprints.manipal.edu/id/eprint/148977

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