Joshi, Vinod Kumar and Borkar, Shirish (2017) A Comparative Study of NC and PP-SRAM Cells with 6T SRAM Cell Using 45nm CMOS Technology. In: International Conference on Advances in Electrical, Electronic and System Engineering, 14-16 Nov 2016, Putrajaya, Malaysia.
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Abstract
Data stability, performance and leakage currents are the few important issues of Static Random Access Memory (SRAM) due to scaling down the technology. We revisited these issues by making a comparative study of N-Controlled SRAM cell (NC-SRAM) and PM
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | gate leakage, leakage power dissipation, 6T SRAM, NC- SRAM, PP-SRAM. |
| Subjects: | Engineering > MIT Manipal > Electronics and Communication |
| Depositing User: | MIT Library |
| Date Deposited: | 23 Jun 2017 10:20 |
| Last Modified: | 23 Jun 2017 10:20 |
| URI: | http://eprints.manipal.edu/id/eprint/149146 |
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