Shyam Prasad, K and Rao, Ashok and Gahtori, Bhaskar and Bhathula, Sivaiah and Dhar, Ajay and Chang, Chia-chi and Kua, Yung-kang (2017) Low-temperature thermoelectric properties of Pb doped Cu2SnSe3. Physica B: Condensed Matter, 520 (1). pp. 7-12. ISSN 09214526

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Abstract

A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT ~ 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

Item Type:	Article
Uncontrolled Keywords:	Thermoelectrics Electrical resistivity Thermopower Thermal conductivity Figure of merit
Subjects:	Engineering > MIT Manipal > Physics
Depositing User:	MIT Library
Date Deposited:	02 Sep 2017 06:26
Last Modified:	02 Sep 2017 06:26
URI:	http://eprints.manipal.edu/id/eprint/149628

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