Modeling of nanocluster carbon defect states & thin film transistor

Ramavenkateswaran, N and Sreelakshmi, K and Shounak, De and Satyanarayana, B S (2017) Modeling of nanocluster carbon defect states & thin film transistor. In: India International Conference on Power Electronics (IICPE), 17/11/2016, Thapar University, Patiala (Punjab).

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Abstract

Nano cluster carbons in its various forms like carbon nanotubes, fullerene and graphene have become attractive material for a wide range of application. The uniqueness of this, material is its ability to bond in different ways, including sp3, sp2 and

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: amorphous silicon,defect states,space charge limited current, nanocluster carbon
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 07 Dec 2017 04:37
Last Modified: 07 Dec 2017 04:37
URI: http://eprints.manipal.edu/id/eprint/150165

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