Ramavenkateswaran, N and Sreelakshmi, K and Shounak, De and Satyanarayana, B S (2017) Modeling of nanocluster carbon defect states & thin film transistor. In: India International Conference on Power Electronics (IICPE), 17/11/2016, Thapar University, Patiala (Punjab).
![[img]](http://eprints.manipal.edu/style/images/fileicons/application_pdf.png) |
PDF
944.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy |
Abstract
Nano cluster carbons in its various forms like carbon nanotubes, fullerene and graphene have become attractive material for a wide range of application. The uniqueness of this, material is its ability to bond in different ways, including sp3, sp2 and
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | amorphous silicon,defect states,space charge limited current, nanocluster carbon |
| Subjects: | Engineering > MIT Manipal > Electronics and Communication |
| Depositing User: | MIT Library |
| Date Deposited: | 07 Dec 2017 04:37 |
| Last Modified: | 07 Dec 2017 04:37 |
| URI: | http://eprints.manipal.edu/id/eprint/150165 |
Actions (login required)
 |
View Item |