Muhammed Ali, A V and Kekuda, Dhananjaya (2017) Room Temperature Processed ZnO Thin Film Transistors Grown by Magnetron Sputtering Using Zirconium Oxide Gate Dielectric. Physica Status Solidi (A) Applications and Materials, 214 (12). pp. 1700113-1. ISSN 1862-6300

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Abstract

A room temperature-processed ZnO thin film transistors (TFT) with zirconium oxide (ZrO2) are demonstrated as a gate dielectric, fabricated by dc magnetron sputtering. The oxygen flow rate dependence of ZrO2 thin films on the optical, structural, and electrical properties is investigated. Nanocrystalline ZrO2 films with a grain size of 6.2–16.8nm are obtained at room temperature and grain size is found to be a function of oxygen flow rate during deposition. The electrical characterization of the gate dielectric is carried out using the device structure Al-ZrO2-Al. The leakage properties and dielectric constants are computed for the gate dielectric grown at different oxygen flow rates. Further, bottom gate staggered ZnO thin film transistors are fabricated with the configuration glass/Al/ZrO2/ZnO/Al and the devices exhibit a field effect mobility of �43 cm2 V�1 s�1, a low operating voltage of 1.5 V and on/off ratio of 103. This work could lead to the possibility of low operating voltage TFTs for the next generation display technologies.

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