Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

Shyam Prasad, K and Rao, Ashok and Chauhan, Nagendra S and Bhardwaj, Ruchi and Vishwakarma, Avinash and Tyagi, Kriti (2018) Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications. Applied Physics A: Materials Science and Processing, 8 (1). ISSN 0947-8396

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In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1− xSbxSe3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group − 4 3m . The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution (κe) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

Item Type: Article
Uncontrolled Keywords: Thermoelectrics, figure of merit
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 05 Feb 2018 10:42
Last Modified: 05 Feb 2018 10:42

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