Sarkar, Deepangkar and Sanjeev, Ganesh and Bhat, T N and Mahesha, M G (2018) Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films. Journal of Optoelectronics and Advanced Materials, 20 (1-2). pp. 84-89. ISSN 1454-4164
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Abstract
Ge2Sb2Te5 (GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GST, Phase change memory, Structural property, Optical property, Electrical property, Raman spectroscopy |
| Subjects: | Engineering > MIT Manipal > Physics |
| Depositing User: | MIT Library |
| Date Deposited: | 22 Feb 2018 05:21 |
| Last Modified: | 22 Feb 2018 05:21 |
| URI: | http://eprints.manipal.edu/id/eprint/150607 |
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