Tuning the thermoelectric properties by manipulating copper in Cu2SnSe3 system

Shyam Prasad, K and Rao, Ashok and Christopher, Benedict J and Ruchi, Bhardwaj and Singh, Nagendra C and Safdar Abbas, Malik and Ngo Van, Nong and Nagaraja, B S and Thomas, Riya (2018) Tuning the thermoelectric properties by manipulating copper in Cu2SnSe3 system. Journal of Alloys and Compounds, 748 (01). pp. 273-280. ISSN 0925-8388

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Abstract

Cu2þxSnSe3 (0 � x � 0.08) compounds were synthesized by conventional solid-state reaction followed by spark plasma sintering (SPS) technique. Transport properties of the samples were measured as a function of temperature in the temperature range 323e773 K. As compared to Cu2SnSe3 sample, the electrical resistivity (r) is increased for the sample with x ¼ 0.04, thereafter a decrease is seen with further increase in copper content. Analysis of electrical resistivity indicates that small poloron hoping model is operative in the entire temperature range for all samples. The positive Seebeck coefficient (S) for the samples in the entire temperature range indicates that the majority charge carriers are holes. The highest figure of merit, ZT (¼ 0.32) was achieved at 773 K for the sample Cu2.06SnSe3 which is about 3 times that of Cu2SnSe3 sample. Maximum thermoelectric compatibility factor (e1.28 V�1) was observed at 673 K for the sample Cu2.08SnSe3.

Item Type: Article
Uncontrolled Keywords: Alloys C. X-ray diffraction D. Electrical properties D. Thermal conductivity D. Thermoelectrics
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 02 Jul 2018 06:02
Last Modified: 02 Jul 2018 06:02
URI: http://eprints.manipal.edu/id/eprint/151424

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