DRV Evaluation of 6T SRAM Cell Using Efficient Optimization Techniques

Joshi, Vinod Kumar and Nayak, Chetana (2018) DRV Evaluation of 6T SRAM Cell Using Efficient Optimization Techniques. Active and Passive Electronic Components, 2018 (345728). pp. 1-12. ISSN 0882-7516

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Abstract

An optimization based method which uses bisection search algorithm has been proposed to evaluate the accurate value of Data Retention Voltage (DRV) of a 6T Static Random Access Memory (SRAM) cell using 45nm technology in the presence of process parameter variations. Further, we incorporate an ArtificialNeuralNetwork (ANN) block in our proposed methodology to optimize the simulation run time. The highest values obtained from these two methods are declared as the DRV. We noted an increase in DRV with temperature (

Item Type: Article
Uncontrolled Keywords: 6T SRAM, DRV, SNM, ANN, MC-simulation etc.
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 06 Aug 2018 09:01
Last Modified: 06 Aug 2018 09:01
URI: http://eprints.manipal.edu/id/eprint/151699

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