Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films

Keshav, Rashmitha and Mahesha, M G (2018) Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films. Materials Research Bulletin, 105 (1). pp. 360-367. ISSN 0025-5408

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Structural, optical and emission characteristics of the physical vapor deposited (PVD) ZnS films were investigated. Refined patterns of x-ray diffractogram (XRD) revealed that the grown films have zinc blende (ZB) structure with preferential orientation along (111) plane. Optical spectrograph was analyzed to derive various optical parameters, including optical band gap, which assess the device suitability of grown films. Raman spectra, fitted with Lorentzian peak, provided insight on frequency shift as an effect of elastic and thermal strains. Intensified peaks in photoluminescence spectra reflected observable recombination process due to larger band gap and assisted in study of defect-states in the grown films. In brief, the paper reports on influence of thickness and post deposition annealing on film characteristics analyzed through spectroscopic techniques.

Item Type: Article
Uncontrolled Keywords: II–VI Semiconductors Rietveld refinement Physical vapor deposition Raman spectroscopy Photoluminesce
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 07 Sep 2018 08:15
Last Modified: 07 Sep 2018 08:15

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