Effect of bismuth nanoparticle incorporation on the characteristics ofp-ZnTe/n-CdS thin film light sensors

Rao, Gowrish K and Ashith, V K and Kumar, Pawan (2018) Effect of bismuth nanoparticle incorporation on the characteristics ofp-ZnTe/n-CdS thin film light sensors. Sensors and Actuators, A: Physical, 284. pp. 194-200. ISSN 0924-4247

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Abstract

tThe effect of bismuth nanoparticle incorporation on the characteristics of p-ZnTe/n-CdS light sensors isevaluated in detail. The device was fabricated by vacuum evaporation method. The bismuth nanoparticleswere obtained on the substrates kept at 453 K. The electrical conductivity of ZnTe layer was found toincrease significantly after the introduction of bismuth nanoparticles. The I-V and C-V characteristics ofthe devices showed significant improvement in the electrical characteristics after doping. The photo-response properties of the diodes was also found to improve after the incorporation of bismuth. Thephotocurrent increased nearly 10 times and the photo-response was found to be much faster

Item Type: Article
Uncontrolled Keywords: p-ZnTe/n-CdS heterojunction, Bismuth, I-V characterization, C-V characterization, Photo-response
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 07 Dec 2018 09:57
Last Modified: 07 Dec 2018 09:57
URI: http://eprints.manipal.edu/id/eprint/152379

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