Vali, Pandurang Indhudhar and Shetty, Pramoda Kumara and Mahesha, M G and Petwal, V C and Dwivedi, Jishnu and Phase, D M and Choudhary, R J (2018) Implications of electron beam irradiation on Al/n-Si Schottky junction properties. Microelectronics Reliability, 91 (1). pp. 179-184. ISSN 0026-2714
![]() |
PDF
5471.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy |
Abstract
The 7.5 MeV electron beam irradiation (EBI) effects on the Al/n-Si Schottky junction properties is studied in detail by analyzing I-V characteristics, power law characteristics, photoelectron spectra and energy band diagrams. The modifications in the junction parameters such as Schottky barrier height (ΦB), ideality factor (n), and series resistance (RS) at different irradiation doses are caused due to the formation of Al2O3-SiO2 dielectric medium in the interface of Al and n-Si. As a result, ΦB and band bending properties of the junction were modified. A linear correlation of ΦB with EBI dose, interface trap states (m) and effective work functions (EWFs) suggests that the EBI technique is particularly advantageous for the miniature of devices which use band lineup as a key parameter in the device processing
Item Type: | Article |
---|---|
Uncontrolled Keywords: | Electron beam irradiation Schottky barrier height Interface traps XPS Effective work function Synchr |
Subjects: | Engineering > MIT Manipal > Physics |
Depositing User: | MIT Library |
Date Deposited: | 19 Dec 2018 11:05 |
Last Modified: | 19 Dec 2018 11:05 |
URI: | http://eprints.manipal.edu/id/eprint/152487 |
Actions (login required)
![]() |
View Item |