Implementation of Low Voltage Floating Gate MOSFET based Current Mirror Circuits using 180nm technology

Mishra, Ansuman and Bhat, Vineeth K and Pai, Krishnaprasad and Kamath, D V (2018) Implementation of Low Voltage Floating Gate MOSFET based Current Mirror Circuits using 180nm technology. In: sponsored 3rd International Conference on Inventive Systems and Control, 10/01/2019, JCT College of Engineering and Technology.

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Abstract

The paper discusses implementation of low voltage (LV) basic current mirror (CM) and cascode current mirror (CCM) circuits using Floating Gate MOSFET (FGMOS) devices. The performance parameters such as output resistance, minimum output voltage requirement and power dissipation are compared for basic CM and double CCM circuits. The current mirror circuits are implemented with 180 nm technology using Cadence Virtuoso and simulated with Spectre RF. The simulation results are in good agreement with theory. The FGMOS based basic CM and double CCM circuits exhibited 52.4% and 40% power reduction as compared to gate driven current mirror circuits

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Floating Gate MOSFET, Current mirror, Cascode Current mirror
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 17 Jan 2019 08:40
Last Modified: 17 Jan 2019 08:40
URI: http://eprints.manipal.edu/id/eprint/153001

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