Structural and optical studies of gamma irradiated N-doped 4H-SiC

Vali, Indudhar Panduranga and Shetty, Pramod K and Mahesha, M G and Sathe, V G and Phase, D M and Choudhary, R J (2019) Structural and optical studies of gamma irradiated N-doped 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 440 (1). pp. 101-106. ISSN 0168-583X

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SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1 Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.

Item Type: Article
Uncontrolled Keywords: Silicon carbide; Gamma irradiation; LOPC modes; PL; XRD
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 19 Feb 2019 08:04
Last Modified: 19 Feb 2019 08:04

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