170 MHz GBW, Two Stage CMOS Operational Amplifier with High Slew Rate using 180 nm Technology

Guruprasad, . and Kumara, Shama (2015) 170 MHz GBW, Two Stage CMOS Operational Amplifier with High Slew Rate using 180 nm Technology. In: IEEE INDICON 2015, 19/12/2015, Jamai Millai Islamia. New Delhi.

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Abstract

—Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space.TheproposedpaperpresentsdesignofaTwoStageCMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/µs during rising edge and 227V/µs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: CMOS op-amp, Slewrate
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 03 Jul 2019 04:48
Last Modified: 03 Jul 2019 04:48
URI: http://eprints.manipal.edu/id/eprint/154091

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