Effect of doping concentration and annealing temperature on nitrogen‑doped ZnO thin films: an investigation through spectroscopic techniques

Chaitra, U and Mahesha, M G and Kekuda, Dhananjaya and Rao, Mohan K (2019) Effect of doping concentration and annealing temperature on nitrogen‑doped ZnO thin films: an investigation through spectroscopic techniques. Applied Physics A: Materials Science and Processing, 125 (6). 394(1)-394(10). ISSN 0947-8396

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Abstract

Undoped and nitrogen-doped ZnO (NZO) thin films were deposited by sol–gel spin-coating technique on glass substrates. The thin film preparation was accomplished using zinc acetate dihydrate, monoethanolamine and 2-methoxyethanol as the precursors. Ammonium acetate was used as the source of nitrogen for doping. The effect of dopants and the post-heating temperature on the various physical properties of the deposited films was explored. The X-ray diffraction studies reveal the polycrystalline nature of the films which possess a preferred c-axis orientation. Raman characterizations of the films show a clear indication of nitrogen incorporation in the films. The carrier concentration of the thin films was of the order of 1017/ cm3 and resistivity as minimum as 0.371 Ω cm was observed for 1 at.% NZO thin films post-heated at 500 °C. The 1 at.% and 2 at.% doped NZO films post-heated at 300 °C and 1 at.%, 2 at.% and 3 at.% doped NZO films with post-heat treatment at 500 °C exhibited p-type conductivity. In the aging study, 500 °C annealed films retained p-type conductivity for 5 days

Item Type: Article
Uncontrolled Keywords: p-type conductivity, nitrogen doped ZnO
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 18 Sep 2019 06:09
Last Modified: 17 Mar 2020 10:12
URI: http://eprints.manipal.edu/id/eprint/154564

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