Enhancement in the thermoelectric properties of  Cu3SbSe4 by Sn doping

Shyam Prasad, K and Rao, Ashok (2019) Enhancement in the thermoelectric properties of  Cu3SbSe4 by Sn doping. Journal of Materials Science: Materials in Electronics, 30 (1). pp. 16596-16605. ISSN 0957-4522

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The solid-state reaction technique was employed to fabricate Sn doped Cu3SbSe4 samples. The effect of doping on structural and thermoelectric properties of Cu3SbSe4 samples is represented in the present communication. The powder X-ray diffraction pattern of all the samples show that they have tetragonal structure (space group Ī42m ). It is observed that doping Sn at Sb site acts as acceptor dopant which enhances hole concentration. The temperature dependent electrical resistivity (ρ(T)) is observed to decrease with increase in Sn concentration up to x = 0.03, thereafter ρ(T) increases with the increase in x concentration. To explore the conduction mechanism, we have employed small poloron hopping (SPH) model to the ρ(T) data and the results indicate that SPH is operative in the high temperature regime for all samples. The data of Seebeck coefficient (S(T)) confirms that holes are the majority charge carriers for pristine as well as doped samples. The analysis of S(T) data reveals that all the samples have a narrow band gap. The contribution from electron thermal conductivity is found to be less than 1%, thus the total conductivity is mainly because of phonon thermal conductivity. The highest value of dimensionless figure of merit (ZT = 0.127) was achieved at 374 K for the sample Cu3Sb0.99Sn0.01Se3 which is slightly higher than that of the pristine sample (ZT = 0.115). The highest value of compatibility factor (0.98 V−1) was observed for the sample Cu3Sb0.98Sn0.02Se3 at 374 K

Item Type: Article
Uncontrolled Keywords: Thermoelectrics, Seebeck coefficient, figure of merit
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 19 Sep 2019 06:22
Last Modified: 19 Sep 2019 06:22
URI: http://eprints.manipal.edu/id/eprint/154574

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